| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for measuring film thickness highly accurately based on a spectral waveform of reflected light from a device having an optional shape having large irregularities on the sample surface after deposition or after CMP (Chemical Mechanical Polishing) processing. SOLUTION: When measuring the film thickness after deposition or after CMP processing, spectral waveforms of reflected light and zero-order light of the reflected light are detected simultaneously, and the degree of the irregularities on the sample surface is calculated. Each waveform correction is performed relative to the spectral waveform of the reflected light and the spectral waveform of the zero-order light at the calculation time of the film thickness, and the correlation of the spectral waveforms after waveform correction is calculated. When a correlation value is large, the film thickness is determined by the frequency and phase analysis. When the correlation value is small, since there is some possibility that an influence of the irregularities on the surface is not removed by the waveform correction, a film thickness measuring system of another system such as fitting is applied. COPYRIGHT: (C)2004,JPO&NCIPI
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