| 摘要 |
A method for manufacturing a capacitor on a single-crystal silicon substrate, comprising the steps of: forming a silicon oxide layer; depositing and completely oxidizing a titanium layer; depositing a platinum layer of a thickness ranging between 800 and 1200 Å, intended to form a first electrode of the capacitor, the platinum deposition being performed by sputtering at a pressure of 1.5x10<5 >Pa and at a temperature ranging between 360 and 600° C.; performing an anneal under an oxidizing atmosphere at a temperature ranging between 650 and 800° C.; depositing and oxidizing a thin layer of a ferroelectric material, intended to form the inter-electrode insulator of the capacitor; and depositing a conductive layer, intended to form a second electrode of the capacitor.
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