| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device in which the deterioration of the characteristics of a capacity film containing a metal oxide is suppressed and the characteristics of transistors are stabilized, and to provide a method for manufacturing the same. <P>SOLUTION: The semiconductor device includes a laminated structure containing a semiconductor substrate 30, transistors 1, 1' formed on the semiconductor substrate 30, a capacitive element 7 disposed on an upper layer from the transistors 1, 1' and having a capacity film 7b including the metal oxide, a hydrogen barrier film 18 disposed so as to cover the capacity film 7b in the upper layer than the capacitive element 7, and a moisture resistant protective film 19 disposed on the upper layer than the hydrogen barrier film 18 in such a manner that this laminated structure further includes a hydrogen-containing film 17 disposed by avoiding positions directly above and directly below the capacity film 7b in the lower layer from the hydrogen barrier film 18. The method for manufacturing the same is provided. <P>COPYRIGHT: (C)2004,JPO&NCIPI |
