| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To reduce the instability of secondary ion intensity on a silicon base surface and the uncertainty of an interface position, and to improve the accuracy in measurement. <P>SOLUTION: An amorphous silicon layer 4 is formed on the silicon base 1 exposed by eliminating a metal silicide film 3 formed on a sample surface, and a film thickness of the amorphous silicon layer 4 is determined to approximately flatten the unevenness on the interface of the metal silicide film 3 and the silicon base 1. Whereby the instability of the secondary ion intensity immediately after the start of measurement is curbed, and the quantitative analysis can be performed while the secondary ionization rate is stable after the interface position of the metal silicide film 3 and the silicon base 1 in the processed sample, that is, in the all area including the silicon base 1 surface. <P>COPYRIGHT: (C)2004,JPO&NCIPI</p> |
