| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a lithography apparatus for semiconductor processing for generating a mask-less pattern using a MDI process technique. <P>SOLUTION: The lithography apparatus for semiconductor processing for generating a mask-less pattern includes, a source integrated light valve (SLV) array 420 of radiation source cells (RSCs) which are formed on a flexible insulating film supported by a supporting frame 426 and arranged in a matrix; and control logic mechanisms 424 which are arranged on the film for controlling the cells, each cell including a radiation source, a target on which radiation is incident to generate x-rays, and an aperture (REA) for radiating x-rays on a surface to be exposed by the target. <P>COPYRIGHT: (C)2004,JPO&NCIPI</p> |
