| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device which can suppress the peel of a low dielectric constant insulating film formed on an insulating film made of silicon carbide or the like. SOLUTION: A first insulating film of silicon carbide or silicon oxycarbide is formed on a semiconductor substrate by plasma-aided chemical vapor deposition. The first insulating film is surface-treated by using treatment liquid containing a compound having a silanol group and a reactive functional group. On the first insulating film with its surface treated with the process liquid, a second insulating film is formed of an organic insulating material whose relative dielectric constant is lower than that of a silicon oxide. COPYRIGHT: (C)2004,JPO&NCIPI
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