| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride based compound semiconductor element excellent in outputting the light. <P>SOLUTION: In the nitride based compound semiconductor light emitting element, an electrode for a p-type, a p-type semiconductor layer, a light emitting layer, an n-type semiconductor layer and an electrode for an n-type are formed sequentially on a base substrate. The electrode side for an n-type is the main light output surface. The element is characterized by that a current inhibition layer is formed in a part between the p-type semiconductor layer and the electrode for a p-type. The manufacturing method of the element contains a process for forming sequentially the n-type semiconductor layer, a light emitting layer, and the p-type semiconductor layer on the substrate; a process for forming the electrode for a p-type after the current inhibition layer is formed in a part on the p-type semiconductor layer; a process for forming the seating substrate on the electrode for a p-type; and a process for eliminating a part or the whole oh the substrate, and exposing a part or the whole of the n-type semiconductor layer. <P>COPYRIGHT: (C)2004,JPO&NCIPI |
