| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device that is low in coherence and can be modulated at high speed. SOLUTION: This semiconductor light emitting device which is low in coherence and can be modulated at high speed is provided with an n-type DBR reflection film 102, AlGaAs/InGaAs multi-quantum well active layer 103, and a vertical surface emitting laser element composed of a p-type DBR reflection film 104, a high-resistance region 105, a p-type electrode 106, and an n-type electrode 107 on an n-type GaAs substrate 101. In addition, this light emitting element is also provided with a photonics crystalline body 109 in the light emitting area of the laser element. COPYRIGHT: (C)2004,JPO&NCIPI |
