| 摘要 |
PROBLEM TO BE SOLVED: To suppress the fluctuation of wiring resistance, and restrain an increase in inter-wiring capacitance caused by the insertion of an etching stopper. SOLUTION: A semiconductor device includes a first low dielectric constant film 2 formed on a substrate 1, a second low dielectric constant film 8 formed on the first low dielectric constant film 2, and a third low dielectric constant film 9 which is formed on the second low dielectric constant film 8 and has a trench 11. The bottom of the trench 11 forms the second low dielectric constant film 8, and main substances of the first to third low dielectric constant films 2, 8 and 9 are the same. The second low dielectric constant film 8 is selected so as to have etching resistance higher than that of the third low dielectric constant film 9. COPYRIGHT: (C)2004,JPO&NCIPI
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