| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a compound semiconductor device which can properly etch an InGaP epitaxial layer formed on a p-GaAs epitaxial layer. SOLUTION: On a GaAs substrate 11, an n<SP>+</SP>-GaAs subcollector layer 12, an n-GaAs collector layer 13, a p-GaAs base layer 14, an n-In<SB>0.56</SB>Ga<SB>0.44</SB>P emitter layer 15, an n<SP>+</SP>-GaAs emitter contact layer 16, and an n<SP>+</SP>-InGaAs non-alloy collector layer 17 are crystal-grown sequentially to form an HBT 30. On this occasion, after the p-GaAs base layer 14 is epitaxially grown, residual As is removed by flowing an N<SB>2</SB>gas 32, which is an inert gas, to the base layer 14. COPYRIGHT: (C)2004,JPO&NCIPI
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