| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which has a contact via in which a contact resistance does not increase even by making it microscopic, and its manufacturing method. SOLUTION: The semiconductor device has a first conductive layer and a wiring connection part in which a metal material constituting the first conductive layer is diffused in an insulator to indicate the conductivity, and the semiconductor device is constituted so that the first conductive layer is electrically connected to the insulator. The manufacturing method comprises the step in which the diffusion is caused by a function of heat or an electric field. COPYRIGHT: (C)2004,JPO&NCIPI
|
