| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device by which a warpage due to film lamination on a dummy substrate can be prevented when it is placed instead of a depositing substrate during precoating in prior to film formation of the depositing substrate and furthermore the generation of particles accompanying the warpage can be suppressed or prevented. SOLUTION: While a dummy substrate 11 is placed on a substrate holding plate 2, a cleaning gas is introduced into a substrate processing chamber 50 to clean the inside thereof, and while the dummy substrate 11 is still placed on the substrate holding plate 2, a film formation processing gas is supplied into the substrate processing chamber 50 to perform precoating. Then, while a product substrate 1 is placed on the substrate holding plate 2, the film formation processing gas is supplied into the substrate processing chamber 50 to form a film. A dummy substrate whose surface is uneven is used as the dummy substrate 11, preventing the warpage of the dummy substrate due to a stress of a film made by precoat film formation. COPYRIGHT: (C)2004,JPO&NCIPI
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