| 摘要 |
PROBLEM TO BE SOLVED: To provide a magnetic cell in which a reverse current when magnetization is reversed by direct driving by a current can be reduced, and further provide a magnetic memory cell using it. SOLUTION: This cell is a magnetic cell provided with a first ferromagnetic layer C1 of which the magnetization (M1) direction is fixed substantially a first direction, a second ferromagnetic layer C2 of which the magnetization (M2) direction is fixed substantially a second direction being opposite to the first direction, a third ferromagnetic layer A which is provided between the first and the second ferromagnetic layers and of which the magnetization direction is variable, a first intermediate layer B1 provided between the first and the third ferromagnetic layers, and a second intermediate layer B2 provided between the second and the third ferromagnetic layers. COPYRIGHT: (C)2004,JPO&NCIPI
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