| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and its apparatus for detecting a state of a thin film at a high speed to decide the characteristic of a semiconductor thin film. SOLUTION: In the method and the apparatus to decide the characteristic of the thin film, when the thin film is subjected to some treatment/processing (for example, annealing process), a time change of a refractive index n and an extinction coefficient k of the thin film from a change start (for example, melting) to a change completion (for example, solidification) of the thin film of a treated object is obtained at a picosecond high time resolution, for example, by fetching it by a streak camera 55 (5) and by achieving a prescribed operation at an operation part 7. The state change of the thin film, for example, the progress of crystallization and the transition of the growth of a crystalline particle is acquired at a picosecond unit. COPYRIGHT: (C)2004,JPO&NCIPI
|
