MIS TRANSISTOR WITH SELF-ALIGNED GATE AND METHOD FOR MAKING SAME

摘要

The invention concerns a MIS transistor having a T-shaped gate characterized by the presence of a shape material (14) coating a solid T shape. The gate structure is housed in the envelope formed by the shape material (14). The coating of the T shape of the gate by the shape material (14) is carried out right from the beginning of the production of the gate structure and is selected such that it is resistant to all the subsequent processes for manufacturing the transistor and is maintained, thereby defining the final shape of the gate structure, thus resulting in a perfectly controlled gate shape.