| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of preventing oxidation of a contact plug just under a lower electrode of a capacitor, and its manufacturing method. SOLUTION: The method for manufacturing the semiconductor device has the steps of forming an n-type impurity diffusion region 5b on a surface layer of a silicon (semiconductor) substrate 1 to form an interlayer insulated layer 8 thereon, forming a conductive plug 12a connected to the n-type impurity diffusion region 5b in a contact hole 8b of the interlayer insulated layer 8, forming a lower electrode conductive layer 13, forming a dielectric layer 14 on the lower electrode conductive layer 13 by a MOCVD method; forming an upper electrode conductive layer 15 on the dielectric layer 14, patterning from the upper electrode conductive layer 15 to the lower electrode conductive layer 13 to form a capacitor Q<SB>1</SB>, and holding a temperature of the silicon substrate 1 at 550°C or below while annealing the capacitor Q<SB>1</SB>in the atmosphere containing oxygen. COPYRIGHT: (C)2004,JPO&NCIPI
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