SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

PROBLEM TO BE SOLVED: To inhibit the occurrence of leakage currents attributable to a deterioration in crystallinity along the emitter/base junction in a bipolar transistor wherein the base and emitter are successively formed by epitaxial growth. SOLUTION: The upper surface of a base p-type single crystal layer 15 is positioned higher than the bottom surface of an insulating film 18 provided on the side wall of an base/emitter aperture 17, and a facet is formed so that the side face of the p-type single crystal layer 15 and the side face of the emitter n-type single crystal layer 17 form an acute angle relative to the interface between the p-type single crystal layer 15 and the n-type single crystal layer 17. The design prevents deterioration in crystallinity in the emitter/base layer. COPYRIGHT: (C)2004,JPO&NCIPI