| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for heat treatment of a silicon wafer by which the silicon wafer having a desired quality is easily prepared without being influenced by a condition of the heat treatment etc. in an LSI manufacturing process after this, by precisely controlling BMD distribution in a depthwise direction and a DZ width in a wide range. SOLUTION: By the method for heat treatment of the silicon wafer, the wafer obtained from a single crystal manufactured by a CZ method is treated with heat. First of all, first heat treatment is performed for keeping the silicon wafer in an atmosphere containing nitrogen and at temperature of≥1,000°C and≤1,300°C for 2 sec or longer than this and thereafter, and quickly cooling it at a cooling speed≥5°C/sec. After this, second heat treatment is performed for keeping the wafer at a temperature of≥400°C and≤1,050°C and in an atmosphere of oxidative gas, Ar gas, H<SB>2</SB>gas or the mixed gas of these for 10 sec or longer than this, and thereafter keeping this in the atmosphere of N<SB>2</SB>gas, the oxidative gas, Ar gas, H<SB>2</SB>gas or the mixed gas of these. The second heat treatment takes 30 minutes or longer than this in total. As the result of this, the BMD distribution in the depthwise direction and the DZ width are precisely controlled in the wide range to easily obtain the high-quality silicon wafer, where a desired BMD distribution shape and DZ width can be formed. COPYRIGHT: (C)2004,JPO&NCIPI
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