发明名称 SCANNING ELECTRON BEAM APPARATUS
摘要 PROBLEM TO BE SOLVED: To obtain a bright image of a sample of high electric insulation, in a scanning electron beam device. SOLUTION: The scanning electron beam device 10 observes the sample 5 of high insulation, on the basis of secondary electrons Z generated at the sample 5 by focusing primary electrons Y, based on the sample with an objective lens. A lower electrode 3b of a bipotential lens 3, adjacent to the sample 5, is applied potential VL, and the sample 5 is applied potential VS which is adjusted to satisfy VL>VS. As a result, substantial potential of the sample 5, the surface of which is charged positive, almost the same as the ambient potential so that the secondary electrons Z are detected efficiently by a detector 2 for secondary electrons. COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP2004193017(A) 申请公布日期 2004.07.08
申请号 JP20020361249 申请日期 2002.12.12
申请人 SEIKO INSTRUMENTS INC 发明人 YONEZAWA AKIRA;SATO MITSUYOSHI
分类号 H01L21/66;H01J37/28;(IPC1-7):H01J37/28 主分类号 H01L21/66
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