发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device having a test circuit which acquires the distribution of the potential in a power supply line. SOLUTION: The test circuit for measuring the distribution of the potential 1 of the semiconductor device is provided with a plurality of MOS (metal oxide semiconductor) transistors 3m, source terminals 6m of which are connected to the power supply line at a plurality of spots. Drain terminals 7m of the MOS transistors 3m are connected to each other in a state of a common drain node 8 and are connected to a potential monitor terminal pad 5. In addition, gate terminals 9m of the MOS transistors 3m are respectively connected to outputs 11m of a plurality of registers constituting a shift register. The outputs of the plurality of registers, to which clocks 12 and control signals 13 are inputted and which constitute the shift register, are controlled so that the output 11m of one register makes the MOS transistors 3m to be in an electrical continuous state. COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP2004191212(A) 申请公布日期 2004.07.08
申请号 JP20020360229 申请日期 2002.12.12
申请人 TOSHIBA CORP 发明人 HIRABAYASHI OSAMU
分类号 G01R31/28;H01L21/822;H01L27/04;(IPC1-7):G01R31/28 主分类号 G01R31/28
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