| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which the parasitic capacitance of the wires within the semiconductor device do not inhibit input and output of a high frequency electric signals. SOLUTION: The semiconductor device comprises a first through-hole wiring 17c provided through a first dielectric material substrate 13a, a second through-hole wiring 17d provided through a second dielectric material substrate 13b, and an internal wiring 17b sandwiched by the first dielectric material substrate 13a and the second dielectric material substrate 13b. The first through-hole wiring 17c and the second through-hole wiring 17d are allocated with separation as much as the internal wiring 17. COPYRIGHT: (C)2004,JPO&NCIPI |
