| 摘要 |
1,162,664. Soldering. MATSUSHITA ELECTRONICS CORP. 26 Sept., 1966 [30 Sept., 1965], No. 42914/66. Heading B3R. [Also in Division C7] In providing a gas-tight bond between a crystal and a metal molybdenum or tungsten is deposited from the vapour phase of a compound of molybdenum or tungsten respectively on the crystal held at a temperature of at least 500‹ C. and the metal is joined to the metallized crystal. The metal may be brazed or soldered to the metallized surface. In an example hydrogen is passed over molybdenum pentachloride powder at 120‹ C. and the mixed gas is led over sapphire at 500‹ C., 800‹ C. and 1000‹ C. to deposit molybdenum thereon. The metallized sapphire is plated with copper which is then heated at 700‹ C. in hydrogen and a copper member is silver-brazed thereto. A sapphire disc is similarly adhered to a steel frame to provide an observation window in a microwave oscillator. In another example hydrogen is led over tungsten hexachloride powders at 150‹ C. and the mixed gas is led over a quartz plate at 800‹ C. to deposit a tungsten film thereon. The tungsten film is silver brazed to a piece of copper. Molybdenum and tungsten may be deposited from heated molybdenum carbonyl and tungsten carbonyl respectively on to a ruby under vacuum. The crystals employed may be diamond, rutile, silicon, silicon carbide or germanium and bonds may be provided between diamond and iron, quartz and steel, silicon carbide and nickel and silicon and steel.
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