| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device in which the lifetime of a metal interconnect such as a Cu interconnect is lengthened by enhancing the adhesion between the metal interconnect and a metal-diffusion barrier film and consequently enhancing the resistance to electromigration in the metal interconnect. SOLUTION: A metal interconnect 7 is formed so as to expose the upper face in a groove of an insulating film 2 formed on a semiconductor substrate. Silicon is diffused from the upper face of the metal interconnect 7. A metal-diffusion barrier film 9 is formed on the exposed face of the silicon-containing metal interconnect 8. Because of the good adhesion between the silicon-containing metal interconnect 8 and the metal-diffusion barrier film 9, metal particles in the metal interconnect are stabilized so that migration of the metal particles is prevented to enhance the resistance to electromigration. Besides, disconnection of the metal interconnect due to the stress by a protective film or the like formed as an upper layer is also prevented to enhance the resistance to stress migration. Therefore, a metal interconnect having a long interconnect lifetime can be formed. COPYRIGHT: (C)2004,JPO&NCIPI
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