| 摘要 |
PROBLEM TO BE SOLVED: To provide an SOI-wafer manufacturing method of high productivity wherein generations of voids are suppressed when manufacturing the SOI-wafer. SOLUTION: In the SOI-wafer manufacturing method, an insulation layer is so formed on at least one of two raw-material wafers as to stick on each other the one and the other wafer without using any bonding agent. As the raw-material wafer, the one on whose surface no linear defect is existent is used. Also, with respect to the SOI-wafer manufacturing method wherein an insulation layer is so formed on at least one of the two raw-material wafers as to stick the one on the other wafer without using any bonding agent, the raw-material wafers are subjected previously to a high-temperature heat treatment. COPYRIGHT: (C)2004,JPO&NCIPI
|
