| 摘要 |
PROBLEM TO BE SOLVED: To enhance a dielectric breakdown resistance between copper wirings of a semiconductor device and to reduce a capacity between the copper wirings. SOLUTION: A wiring 25 containing copper as a main component is formed on an insulating film 20(17) on a semiconductor substrate. Then, an insulating film 111 having a function of restricting or preventing a diffusion of copper is formed on an upper surface and a side surface of the wiring 25 and on the insulated film 20(17). An insulating film 112 and an insulating film 114 having a lower dielectric constant than the insulating film 111 are formed on the insulating film 111. At this point, a void 113 enclosed with the insulating film 112 and the insulating film 114 is formed between the closest wirings of the wiring 25. COPYRIGHT: (C)2004,JPO&NCIPI
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