| 摘要 |
The invention advantageously provides a device and method for optimal data retention in a trapping nonvolatile memory cell. A preferred embodiment of the invention provides a trapping nonvolatile memory cell comprising a semiconductor substrate further comprising a source, a drain spaced from the source, and a channel region formed between the source and the drain, a first isolating layer overlying the channel region, a nonconducting charge trapping layer overlying the first isolating layer and trapping electrical charges therein using charge injection, a second isolating layer overlying the trapping layer, and a gate overlying the second isolating layer. After the charges are trapped in the trapping layer, some of the trapped charges are detrapped using electrical field enhanced electron detrapping technique. The charges in the trapping layer are repeatedly trapped and detrapped shallow traps until a desired number of the deep traps are stored in the trapping layer.
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