| 摘要 |
PROBLEM TO BE SOLVED: To control the position of a crystal grain at a high degree in a crystalline thin film obtained by scanning type melting recrystallization. SOLUTION: The crystal grain is grown preferentially from a specific region by forming the specific region to the thin film and using the specific region as the starting thin film by partially melting the partial region of the starting thin film, and by continuously moving the partially melted partial region and passing the partial region in the specific region, and the position of the crystal grain of the crystalline thin film is controlled. COPYRIGHT: (C)2004,JPO&NCIPI
|
