| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor storage device of which the layout area is made small. SOLUTION: A port A of a route of a transistor Ta-bit line pairs (Bai1, /Bai1) and (Bai2, /Bai2)-column selection switches 14ai and 15ai-a data line pair DBa in a memory cell to be accessed and a port B of a route of a transistor Tb-bit line pairs (Bbi1, /Bbi1) and (BBi2, /Bbi2)-column selection switches 14bi and 15bi-a data line pair DBb in the memory cell to be accessed are interleave-operated with two periods of a clock CLK. Data transferred to the data line pairs DBa and DBb are alternately transferred to a data line pair RDB by transfer gates 50 and 51 for every one period of the clock CLK, amplified by a read-amplifier 25 and outputted to an input output buffer 27. The input output buffer 27 outputs the data from the read-amplifier 25 to the outside for every one period of the clock CLK. COPYRIGHT: (C)2004,JPO&NCIPI
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