| 摘要 |
A semiconductor device comprises a diffusion layer in a semiconductor substrate, a gate insulation film on the semiconductor substrate, a gate electrode on the gate insulation film, an interlayer insulation film on the semiconductor substrate so as to cover the gate electrode, and a capacitor on the interlayer insulation film. The capacitor includes a laminated structure made up of a lower electrode, a dielectric film, and an upper electrode. The diffusion layers, the gate electrode, and the lower electrode are connected to one another by a common contact in the interlayer insulation film.
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