发明名称 |
VERTICAL SPLIT GATE NON-VOLATILE MEMORY CELL AND METHOD OF FABRICATION THEREOF |
摘要 |
Semiconductor device comprising a vertical split gate non-volatile memory cell, for storing at least one bit, on a semiconductor substrate, comprising on the substrate a trench, a first active area, a second active area, a channel region extending along a sidewall of the trench, the trench having a length extending in a first direction and a width extending in a second direction perpendicular thereto and the trench being covered on the sidewalls by a tunnel oxide and including at least one gate stack of a floating gate and a control gate, wherein the control gate extends to the bottom part of the trench, a first floating gate is located at a left trench wall to form a first stack with the control gate, and a second floating gate is located at a right trench wall to form a second stack with the control gate. |
申请公布号 |
WO2004057661(A2) |
申请公布日期 |
2004.07.08 |
申请号 |
WO2003IB05502 |
申请日期 |
2003.11.27 |
申请人 |
KONINKLIJKE PHILIPS ELECTRONICS N.V.;VAN SCHAIJK, ROBERTUS, T., F.;VAN DUUREN, MICHIEL, J. |
发明人 |
VAN SCHAIJK, ROBERTUS, T., F.;VAN DUUREN, MICHIEL, J. |
分类号 |
H01L21/336;H01L21/8247;H01L27/115;H01L29/788 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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