| 摘要 |
PROBLEM TO BE SOLVED: To provide a magnetic memory device in which an MRAM element is sufficiently and magnetically shielded against a large outer magnetic field, an operation having no problem for the magnetic field from an environment to which the MRAM element is applied is guaranteed and an electronic unit can be miniaturized and lightened. SOLUTION: The magnetic memory device composed as a magnetic random access memory (MRAM) 30 is formed of a TMR element 10 where magnetization fixing layers 4 and 6 in which magnetization directions are fixed and a magnetic layer (storage layer) 2 whose magnetization direction can be changed are laminated. The TMR element 10 is magnetically shielded by high saturation magnetization material layers 33 and 34 showing a high saturation magnetization of not less than 1.8 tesla (T). COPYRIGHT: (C)2004,JPO&NCIPI |
