| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a resist pattern by which a resist pattern is thickened and a fine resist void pattern is easily formed over the exposure limit by a light source in the conventional exposure apparatus, to provide a high-performance semiconductor device having a fine pattern formed by using a fine resist void pattern formed by the above method, and also to provide a method for manufacturing the semiconductor device. SOLUTION: The method for forming a resist pattern is carried out by forming a resist pattern on a base layer, applying a surfactant-containing liquid containing at least a surfactant to cover the surface of the resist pattern, further applying a thickening material for the resist pattern containing at least a resin and a surfactant, thereon. The method for manufacturing a semiconductor device includes a resist pattern forming process to thicken a resist pattern formed on a base layer by the above method, and a patterning process to pattern the base layer by etching by using the thickened resist pattern as a mask. COPYRIGHT: (C)2004,JPO&NCIPI |
