| 摘要 |
PROBLEM TO BE SOLVED: To realize a technology for improving the quality and reliability of a force-detecting element. SOLUTION: To an electrode 132c on an electrode stage 136c of a first block 120, a needle 144 connected to the an anode of a power source 150 is contacted. To an electrode 142, attached at the bottom of a semiconductor substrate 122 of the first block 120, a needle 140 connected to the anode of the power source 150 is contacted. Also, a needle 148 connected to the cathode of the power source 150 is contacted to an electrode 146 attached to the top surface of the second block 138. Then, a voltage is impressed with the power source 150. Thus, owing to the presence of insulation layer 124 between the semiconductor substrate 122 and a semiconductor gauge 126, lowering of the junction voltage is suppressed. Also, impressing of high voltage to the insulation layer 124 between the semiconductor substrate 122 and the semiconductor gauge 126 can be avoided. COPYRIGHT: (C)2004,JPO&NCIPI
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