发明名称 |
METHOD FOR GROWING SINGLE CRYSTAL |
摘要 |
PROBLEM TO BE SOLVED: To make it possible to pull up a single crystal stably by preventing the rapid increasing phenomenon of a crystal diameter from occurring during pulling up which is a problem in an HMCZ method using a saddle type coil. SOLUTION: A horizontal magnetic field is applied to a raw material melt contained in a crucible in a chamber with the saddle type coil which is placed to be opposed sandwiching the crucible and which is curved along the outer shape of the chamber. Beforehand, the revolution number of the crucible which causes the rapid increasing phenomenon of the crystal diameter is obtained corresponding to the variation of a melt quantity in the crucible. The revolution number of the crucible is controlled with a pattern to avoid this revolution number of the crucible during the pulling up period. COPYRIGHT: (C)2004,JPO&NCIPI
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申请公布号 |
JP2004189557(A) |
申请公布日期 |
2004.07.08 |
申请号 |
JP20020361075 |
申请日期 |
2002.12.12 |
申请人 |
SUMITOMO MITSUBISHI SILICON CORP |
发明人 |
YAMAMOTO YOICHI;KONDO SOICHIRO |
分类号 |
C30B15/20;C30B29/06;(IPC1-7):C30B15/20 |
主分类号 |
C30B15/20 |
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