| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for easily preparing a strained semiconductor single crystal at low cost. SOLUTION: On an unstrained semiconductor single crystal 11 having a lattice constant (a), an amorphous semiconductor 12 whose single-crystal state has a lattice constant (b) different from the lattice constant (a) is formed. Then, the semiconductor single crystal 11 and the amorphous semiconductor 12 are subjected to heat-treatment, and solid interdiffusion is performed between the semiconductor single crystal 11 and the amorphous semiconductor 12 to form an unstrained semiconductor mixed single crystal 13 having a lattice constant (c) midway between the lattice constants (a) and (b). The semiconductor mixed single crystal 13 is subjected to epitaxial growth to form the strained semiconductor single crystal D having a lattice constant (d) different from the lattice constant (c). COPYRIGHT: (C)2004,JPO&NCIPI
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