发明名称 PROCESS FOR PRODUCING COMPOUND SEMICONDUCTOR, APPARATUS THEREFOR, INFRARED EMITTING ELEMENT AND INFRARED RECEIVING ELEMENT
摘要 Process and apparatus for efficiently producing InAs1-xSbx of desired composition. Carrier gas and trimethylantimony ((CH3)3Sb) are introduced through gas introduction pipe (30a) in quartz reaction tube (10). Also, carrier gas and hydrogen chloride (HCl) are introduced. In the middle of hydrogen chloride channel, there is disposed boat (72) on which metallic indium (In metal) (70) is mounted. Further, carrier gas and arsine (AsH3) are introduced in the quartz reaction tube (10). Crystal growth is carried out under such conditions that the ratio of Group V metal to Group III metal, V/III ratio is less than 1. Under such conditions, the solid phase component ratio, x, of produced InAs1-xSbx crystal can be easily regulated by regulating the supply ratio among raw material Group V metals.
申请公布号 WO2004057655(A1) 申请公布日期 2004.07.08
申请号 WO2003JP15479 申请日期 2003.12.03
申请人 TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY TLOCO.,LTD.;KOUKITU, AKINORI;KUMAGAI, YOSHINAO 发明人 KOUKITU, AKINORI;KUMAGAI, YOSHINAO
分类号 C23C16/30;C30B25/02;H01L21/205;H01L31/0264;H01L33/30 主分类号 C23C16/30
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