| 摘要 |
<p>A semiconductor nonvolatile storage circuit characterized in that two MISFET transistors having like characteristics are provided, the voltage of the gate electrode of a first transistor is controlled to the power supply voltage or a value other than the ground voltage for a specific period of time so as to control the conduction of only the fist transistor, deterioration of the conduction resistance of the first transistor is thereby induced, the thus caused difference in performance between the first and second transistors are read in the form of the current difference by allowing the two transistors to conduct simultaneously so as to store and read "0", and contrarily deterioration of the performance of the second transistor is induced while not inducing deterioration of the performance of the first one so as to store "1".</p> |
