| 发明名称 |
POLISHING COMPOSITION FOR METAL |
| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a polishing composition for metals capable of polishing a metal film at high speed even under low load conditions and reducing occurrence of defects of polishing surface, e.g. scratching and dishing in a step for making the metal film on a semiconductor substrate flat and to provide a method for making the metal film on the semiconductor substrate flat by using the polishing composition and to provide a method for producing the semiconductor substrate by using the polishing composition. <P>SOLUTION: The polishing composition for metals comprises a polyoxo-acid and/or its salt, a nonionic surfactant, an anionic surfactant and water. The method for making the metal film on the semiconductor substrate flat comprises using the polishing composition. The method for producing the semiconductor substrate comprises using the polishing composition. <P>COPYRIGHT: (C)2004,JPO&NCIPI</p> |
| 申请公布号 |
JP2004189894(A) |
申请公布日期 |
2004.07.08 |
| 申请号 |
JP20020359706 |
申请日期 |
2002.12.11 |
| 申请人 |
ASAHI KASEI CHEMICALS CORP |
发明人 |
OKITA TERUBUMI;FUNAKOSHI SHINJI |
| 分类号 |
B24B37/00;C09K3/14;H01L21/304;(IPC1-7):C09K3/14 |
主分类号 |
B24B37/00 |
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