| 摘要 |
PROBLEM TO BE SOLVED: To provide a porous silica material having better properties suitable for being used for microelectronic manufacturing, and a process for material manufacturing which is easily integrated to a manufacturing process flow. SOLUTION: A porous dielectric film useful in a semiconductor industry is prepared by depositing an Si-O-C film using a precursor containing carbon and oxygen, and thereafter by decomposing an organic fragment captured inside by heating the Si-O-C film. A method for preparing the porous silica film comprises a step in which the Si-O-C film having a specific dielectric constant k<SB>1</SB>is deposited by chemical vapor deposition using a carbon oxygen compound and a silicon source, a step in which the carbon oxygen compound is not combined with silicon atoms, and a step in which the Si-O-C film is heated so as to form a porous silica film having a specific dielectric constant k<SB>2</SB>(here, k<SB>1</SB>≥k<SB>2</SB>). COPYRIGHT: (C)2004,JPO&NCIPI
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