| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method for semiconductor elements, which is capable of improving the reliability of the elements by removing remaining hydrogen inside of a spacer in the formation process of the spacer. SOLUTION: The manufacturing method includes a step of forming a gate in a predetermined region on a semiconductor substrate, a step of forming the spacer on the sidewalls of the gate, a step for forming a nitride film on the spacer by performing a RTA process in a nitrogen atmosphere, and a step of forming a bonding region on a predetermined region on the semiconductor substrate by performing a contaminant ion implanting process. COPYRIGHT: (C)2004,JPO&NCIPI
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