| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and its manufacturing method capable of suppressing outward diffusion of the impurity from a device isolation film containing the impurity in a heat treatment when forming another member after forming the device isolation film in the device isolation film containing the impurity. SOLUTION: In a device isolation structure formed by filling a trench 12 formed in the surface of a substrate 1 with the device isolation film 2, the device isolation film 2 contains impurity, and concentration of the impurity is more reduced at an upper portion of the device isolation film 2 than at the bottom of the same. COPYRIGHT: (C)2004,JPO&NCIPI
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