发明名称 Photodiode array and method of making the same
摘要 A photodiode array comprises a semiconductor substrate formed with an array of a plurality of pn junction type photodiodes on a light incident surface side, the surface opposite from the incident surface in the semiconductor substrate being made of a (100) plane; a through hole, formed in an area held between the photodiodes, penetrating through the semiconductor substrate from the incident surface side to the opposite surface side; and a conductive layer extending from the incident surface to the opposite surface by way of a wall surface of the through hole; the through hole being formed by connecting a vertical hole part formed substantially perpendicular to the incident surface on the incident surface side, and a pyramidal hole part formed like a quadrangular pyramid on the opposite surface side to each other within the semiconductor substrate; the pyramidal hole part having a wall surface formed as a (111) plane.
申请公布号 US2004129992(A1) 申请公布日期 2004.07.08
申请号 US20030668605 申请日期 2003.09.24
申请人 HAMAMATSU PHOTONICS K.K. 发明人 SHIBAYAMA KATSUMI
分类号 G01J1/24;H01L27/146;H01L31/00;(IPC1-7):H01L31/00 主分类号 G01J1/24
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