发明名称 |
III Group nitride system compound semiconductor light emitting element and method of making same |
摘要 |
A III group nitride system compound semiconductor light emitting element has: a transparent substrate with a concave portion on the surface; a filling material that is embedded in the concave portion; and a III group nitride system compound semiconductor layer that is formed on the surface of the transparent substrate. The filling material has a refractive index substantially equal to that of the III group nitride system compound semiconductor layer or closer to that of the III group nitride system compound semiconductor layer than that of the transparent substrate.
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申请公布号 |
US2004129948(A1) |
申请公布日期 |
2004.07.08 |
申请号 |
US20030694760 |
申请日期 |
2003.10.29 |
申请人 |
TOYODA GOSEI CO., LTD. |
发明人 |
UEMURA TOSHIYA |
分类号 |
H01L33/12;H01L33/22;H01L33/32;H01L33/56;H01L33/60;H01L33/62;(IPC1-7):H01L33/00 |
主分类号 |
H01L33/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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