NON-VOLATILE MEMORY AND WRITE METHOD THEREOF

摘要

A non-volatile memory in which write into a plurality of memory cells connected to the same word line can be performed all at once. In each of the memory cells (10) of a memory cell array (20), source lines (SL) separated from one another for each column are provided. During write, one of the first and the second source voltage is applied to each source line (SL) according to the data to be written. After a first control voltage of negative voltage is applied to a word line (CWL), a second control voltage of high voltage is applied to the word line (CWL) while maintaining the voltage of each source line (SL). Accordingly, each of the memory cells (10) is erased or programmed according to the voltage applied to each source line (SL).