ZnO-BASED p-TYPE SEMICONDUCTOR CRYSTAL, SEMICONDUCTOR COMPOSITE BODY OBTAINED BY USING THE SAME, LIGHT EMITTING ELEMENT OBTAINED BY USING THE SAME AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a ZnO-based p-type semiconductor crystal having excellent reproducibility of characteristics such as the carrier concentration, excellent optical characteristics when used for a light emitting element, and sufficient characteristics when applied to an electronic device.

SOLUTION: The ZnO-based p-semiconductor crystal contains an Ag compound and a ZnO-based oxide. The ZnO-based p-type semiconductor crystal is preferably manufactured by an epitaxial growing method on the surface of a proximity semiconductor crystal layer having the in-plane lattice constant larger than that of the ZnO-based oxide crystal containing no Ag compound.

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