| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon carbide film or the like in which reverse phase resion boundary faces are effectively decreased or eliminated. SOLUTION: In the method of manufacturing a silicon carbide film by epitaxially growing silicon carbide on the surface of a single crystal substrate while succeeding the crystal orientation of the substrate, the whole or a part of the substrate surface is provided with a plurality of projections and recesses running parallel to one another in one direction, and silicon carbide is grown on the substrate surface. COPYRIGHT: (C)2004,JPO&NCIPI
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