| 摘要 |
PROBLEM TO BE SOLVED: To provide a vertical field-effect transistor with high carrier mobility. SOLUTION: On a silicon substrate 10, there are provided a tilting SiC (silicon carbon) layer 11 where a C composition increases as it goes toward the surface, a relaxing SiC layer 12, and a silicon layer 16 successively in lamination. Herein, since silicon is narrower in a lattice interval than SiC, the silicon layer 16 is given compression distortion in parallel to the principal surface of the silicon substrate 10. COPYRIGHT: (C)2004,JPO&NCIPI
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