发明名称 |
Underlayer for polysilicon TFT |
摘要 |
Polycrystalline silicon in semiconductor device is usually crystallized at high temperature annealing. Generally a low heat conducting underlayer is needed to protect substrate and silicon from high temperature crystallization. This invention proposes a new underlayer that improves silicon crystallization and protects substrate during the annealing process. The semiconductor device is a thin film transistor suitable for use in such applications as liquid crystal displays, light emitting diodes, imaging sensors and photovoltaic cells.
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申请公布号 |
US2004130005(A1) |
申请公布日期 |
2004.07.08 |
申请号 |
US20030668873 |
申请日期 |
2003.09.23 |
申请人 |
GUZMAN GUILLAUME;MECHKEN SONIA |
发明人 |
GUZMAN GUILLAUME;MECHKEN SONIA |
分类号 |
H01L21/20;(IPC1-7):H01L23/58 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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