III-GROUP NITRIDE CRYSTAL, METHOD FOR CRYSTAL GROWTH THEREOF, AND SEMICONDUCTOR DEVICE AND SYSTEM

摘要

PROBLEM TO BE SOLVED: To stably grow a crystal of a III-group nitride, wherein a crystalline aggregate constituted of many crystals is formed and covering of a surface of a mixed fused solution is diminished.

SOLUTION: In a reactor 11, the mixed fused solution composed of an alkali metal and a III-group metal is formed. When the crystal of a III-group nitride composed of the III-group metal and nitrogen is grown from the said mixed fused solution 25 and a material containing at least nitrogen, a pressure of the material containing nitrogen is raised in accordance with raising a temperature of the mixed fused solution 25.

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