发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit which drops the second internal supply voltage generated by the first internal supply voltage by discharging when the external supply voltage falls, and thereby stably operates when the external supply voltage is recovered subsequently. SOLUTION: A p-channel MOS transistor 11 which has the source, drain, and gate potentials connected to the second internal supply voltage VPL, and has a substrate potential connected to the external supply voltage VCC, is connected to the output terminal of a second internal supply power generating circuit 2. Due to this structure, the second internal supply voltage VPL is dropped by discharging when the external supply voltage VCC falls. COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP2004193296(A) 申请公布日期 2004.07.08
申请号 JP20020358878 申请日期 2002.12.11
申请人 TOSHIBA CORP 发明人 HAYASHI SHINTARO;MURAOKA KAZUYOSHI
分类号 H01L27/04;H01L21/822;H03K17/22;H03K19/00;(IPC1-7):H01L21/822 主分类号 H01L27/04
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